Conference paper
InAs/InGaAsP Quantum Dots Emitting at 1.5 μm for Applications in Lasers
In this work the epitaxial growth of InAs quantum dots (QDs) in an InGaAsP matrix on an InP wafer is described. A new approach to shift the emission wavelength to the 1.5μm region using deposition of a thin GaAs capping layer on top of the QDs is suggested and exploited. Laser structures based on 5 layers of such dots as the gain material demonstrate lasing in continuous wave regime at 1.5 μm wavelength at room temperature.
Language: | English |
---|---|
Publisher: | IEEE |
Year: | 2011 |
Proceedings: | 23rd International Conference on Indium Phosphide and Related Materials |
ISBN: | 1457717530 and 9781457717536 |
Types: | Conference paper |
ORCIDs: | Semenova, Elizaveta , Kadkhodazadeh, Shima and Yvind, Kresten |