Conference paper
High Q gallium nitride microring resonators
Department of Photonics Engineering, Technical University of Denmark1
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark3
RAS - Ioffe Physico Technical Institute4
Summary form only given. Gallium nitride (GaN) is a promising material for nonlinear microresonators. It has large intrinsic χ(2) and χ(3), excellent thermal properties and a relatively large bandgap [1] and can be used for example for parametric conversion and frequency doubling [2]. Furthermore it is quite resilient and can withstand high temperatures and power.
In this paper, we demonstrate GaN microring resonators with a quality factor (Q) larger than 105, which, to the best of our knowledge, is the highest demonstrated Q for microring resonators in a pure GaN platform [3].
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2017 |
| Pages: | 1-1 |
| Proceedings: | The 2017 European Conference on Lasers and Electro-Optics |
| ISBN: | 1509067361 , 150906737X , 150906737x , 9781509067367 and 9781509067374 |
| Types: | Conference paper |
| DOI: | 10.1109/CLEOE-EQEC.2017.8086619 |
| ORCIDs: | Stassen, Erik , Pu, Minhao , Semenova, Elizaveta and Yvind, Kresten |
Epitaxial growth Frequency conversion GaN GaN microring resonators Gallium nitride III-V semiconductors Micromachining Optical waveguides Q-factor Resonators Waveguide lasers bandgap frequency doubling gallium compounds high Q gallium nitride microring resonators micro-optics nonlinear microresonators optical harmonic generation optical parametric devices optical resonators parametric conversion pure GaN platform quality factor thermal properties
