Conference paper
Activation of ion implanted Si for backside processing by Ultra-fast Laser Thermal Annealing: Energy homogeneity and micro-scale sheet resistance
Department of Micro- and Nanotechnology, Technical University of Denmark1
Nanointegration Group, NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark2
NanoSystemsEngineering Section, Department of Micro- and Nanotechnology, Technical University of Denmark3
Silicon Microtechnology Group, MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark4
MicroElectroMechanical Systems Section, Department of Micro- and Nanotechnology, Technical University of Denmark5
Center for Individual Nanoparticle Functionality, Centers, Technical University of Denmark6
Center for Nanoteknologi, Centers, Technical University of Denmark7
In this paper ion activation of implanted silicon using ultra-fast laser thermal annealing (LTA) process was discussed. The results stated that there was high dopant activation using LTA process for over 70%, excellent within shot activation uniformity, and there was a possibility for overlap parameter optimization.
It was observed that, for activation LTA process, shallow box-shaped profiles- high diffusivity of B in liquids and high-temperatures was observed only near the surface in a submicrosecond timescale. Possible solutions were suggested as to low-cost and high-end for overlap optimization and full-die exposure optics.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2009 |
| Pages: | 1-19 |
| Proceedings: | 17th International Conference on Advanced Thermal Processing of Semiconductors RTP09 |
| ISBN: | 1424438144 , 1424438152 , 9781424438143 and 9781424438150 |
| ISSN: | 1944026x and 19440251 |
| Types: | Conference paper |
| DOI: | 10.1109/RTP.2009.5373465 |
| ORCIDs: | Petersen, Dirch Hjorth and Hansen, Ole |
Implants Laser transitions Permission Photodiodes Semiconductor lasers Si Si:B Simulated annealing Solid lasers Substrates Surface emitting lasers Thermal resistance backside processing boron diffusion diffusivity elemental semiconductors energy homogeneity full-die exposure optics ion implantation ion implanted silicon laser beam annealing microscale sheet resistance overlap parameter optimization semiconductor doping shallow box-shaped profiles shot activation uniformity silicon ultra-fast laser thermal annealing
