Conference paper
Consequence of Non-Uniform Expansion of InP-on-Si Wafers for the Performance of Buried Heterostructure Photonic Crystal Lasers
Department of Photonics Engineering, Technical University of Denmark1
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2
Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark3
Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark4
E-beam metrology is employed to investigate the consequences of non-uniform expansion of 250nm InP layer bonded to Si substrate by BCB and direct wafer bonding for the performance of photonic crystal lasers with buried heterostructures.
Language: | English |
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Publisher: | Optical Society of America (OSA) |
Year: | 2018 |
Proceedings: | Integrated Photonics Research, Silicon and NanophotonicsIntegrated Photonics Research, Silicon and Nanophotonics |
ISBN: | 194358043X , 194358043x and 9781943580439 |
Types: | Conference paper |
DOI: | 10.1364/IPRSN.2018.ITh1B.4 |
ORCIDs: | Sakanas, Aurimas , Yu, Yi , Semenova, Elizaveta , Ottaviano, Luisa , Sahoo, Hitesh Kumar , Mørk, Jesper and Yvind, Kresten |