Conference paper
Butt-joint integration of active optical components based on InP/AlInGaAsP alloys
We demonstrate all-active planar high quality butt-joint (BJ) integration of a QW Semiconductor Optical Amplifier (SOA) and MQW Electro-Absorption Modulator (EAM) based on an InP/AlInGaAsP platform. The degradation of the optical properties in the vicinity of ~1 μm to the BJ interface was determined by means of μPL measurements.
Language: | English |
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Publisher: | IEEE |
Year: | 2014 |
Pages: | 1-2 |
Proceedings: | 26th International Conference on Indium Phosphide and Related Materials |
ISBN: | 1479957291 , 1479957305 , 9781479957293 and 9781479957309 |
Types: | Conference paper |
DOI: | 10.1109/ICIPRM.2014.6880579 |
ORCIDs: | Semenova, Elizaveta and Yvind, Kresten |
Al(role int) Al(role ss) AlInGaAsP(role int) AlInGaAsP(role ss) As(role int) As(role ss) BJ interface Components, Circuits, Devices and Systems EAM Ga(role int) Ga(role ss) III-V semiconductors In(role bin) In(role int) In(role ss) InP(role bin) InP(role int) InP-AlInGaAsP InP-AlInGaAsP(role int) InP/AlInGaAsP alloys Indium gallium arsenide Indium phosphide Laser mode locking MQW Electro-Absorption Modulator Optical reflection P(role bin) P(role int) P(role ss) Photonics and Electrooptics QW Semiconductor Optical Amplifier Quantum well devices SOA Semiconductor optical amplifiers active optical components all-active planar high quality butt-joint integration electro-optical modulation electroabsorption indium compounds integrated optics optical properties photoluminescence quantum well lasers semiconductor optical amplifiers μPL measurements