Conference paper
A 10 MHz GaNFET Based Isolated High Step-Down DC-DC Converter
This paper presents design of an isolated high-step-down DC-DC converter based on a class-DE power stage, operating at a 10 MHz switching frequency using enhancement mode Gallium Nitride (GaN) transistors. The converter operating principles are discussed, and the power stage design rated for 20 W is presented for a stepdown from 200-300 V to 0-28 V.
Commercially available magnetic materials were explored and the high-frequency (HF) resonant inductor and transformer designs using a low-loss Fair-Rite type 67 material are presented. Finite element simulations have been performed to estimate the AC resistances of magnetics at 10 MHz. Experimental results are presented at 12 W, 254 V to 22 V on a laboratory prototype operating at 10 MHz.
At 20 W the experimental prototype achieved an efficiency of 85.2%.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2018 |
| Pages: | 4066-4073 |
| Proceedings: | 2018 International Power Electronics Conference |
| ISBN: | 1538641909 , 4886864031 , 4886864058 , 9781538641903 , 9784886864031 and 9784886864055 |
| Types: | Conference paper |
| DOI: | 10.23919/IPEC.2018.8506666 |
| ORCIDs: | Thummala, Prasanth , Ouyang, Ziwei and Andersen, Michael A. E. |
Class-DE DC-DC conversion Gallium Nitride High frequency Resonant conversion Soft switching
DC-DC power converters DC-DC power convertors GaN GaNFET Gallium nitride HF III-V semiconductors Inverters Magnetic resonance Switches Switching frequency class-DE power stage commercially available magnetic materials converter operating principles enhancement mode Gallium Nitride transistors enhancement mode gallium nitride transistors finite element analysis frequency 10.0 MHz gallium compounds high step-down DC-DC converter high-frequency resonant inductor high-frequency transformers inductors isolated high step-down low-loss Fair-Rite type 67 material power 12.0 W power 20.0 W power field effect transistors power semiconductor switches power stage design transformer designs voltage 0.0 V to 28 V voltage 200 V to 300 V voltage 22 V voltage 254 V wide band gap semiconductors
