Conference paper
A Small-Area Self-Biased Wideband CMOS Balun LNA with Noise Cancelling and Gain Enhancement
In this paper we present a low-power and small-area balun LNA. The proposed inverter-based topology uses selfbiasing and noise cancelling, yielding a very robust LNA with a low NF. Comparing this circuit with a conventional inverterbased circuit, we obtain a ∼3 dB enhancement in voltage gain, with improved robustness against PVT variations.
Simulations results in a 130 nm CMOS technology show a 17.7dB voltage gain, nearly flat over a wide bandwidth (200MHz-1GHz), and an NF of approximately 4dB. The total power consumption is below 7.5 mW, with a very small die area of 0.007 mm2. All data are extracted from post-layout simulations.
| Language: | English |
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| Year: | 2010 |
| Pages: | 1-4 |
| Proceedings: | 2010 IEEE 28th NORCHIP Conference |
| ISBN: | 1424489717 , 1424489725 , 1424489733 , 9781424489718 , 9781424489725 and 9781424489732 |
| Types: | Conference paper |
| DOI: | 10.1109/NORCHIP.2010.5669429 |
| ORCIDs: | Bruun, Erik |
CMOS LNAs CMOS integrated circuits Gain Inverters Noise Noise measurement Thermal noise Wideband baluns bandwidth 200 MHz to 1 GHz gain 17.7 dB gain enhancement integrated circuit modelling inverter-based topology low noise amplifiers noise cancelling size 130 nm wideband CMOS balun LNA wideband amplifiers
