About

Log in?

DTU users get better search results including licensed content and discounts on order fees.

Anyone can log in and get personalized features such as favorites, tags and feeds.

Log in as DTU user Log in as non-DTU user No thanks

DTU Findit

Conference paper

Study of 130 nm SiGe HBT Periphery in the Design of 160 GHz Power Amplifier

In Proceedings of 2018 First International Workshop on Mobile Terahertz Systems — 2018, pp. 1-5
From

University of Rome Tor Vergata1

Department of Electrical Engineering, Technical University of Denmark2

Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark3

At mm wave, and sub-THz frequencies the foundry usually does not provide information about the power amplifying capability or optimum impedances of the transistors for maximum power, and efficiency. Therefore, in this paper, we studied and analyzed the size of a SiGe HBT (Heterojunction Bipolar Transistor) in terms of output power and efficiency performance for the design of a power amplifier (PA) operating at 160 GHz.

Load pull simulations were performed for various size of transistors. Optimum size transistors resulting in high power and efficiency are used to design a 160 GHz power amplifier using the foundry models for transmission lines and MIM capacitors. The simulated power amplifier (excluding interconnects for transistors and MIM) achieves a simulated output power of 18 dBm with a power added efficiency (PAE) of 19%.

Future work includes the design of low loss interconnects for transistors and MIM capacitors, and fabrication of the power amplifier.

Language: English
Publisher: IEEE
Year: 2018
Pages: 1-5
Proceedings: 2018 First International Workshop on Mobile Terahertz Systems (IWMTS)
ISBN: 1538612208 , 1538612216 , 1538612224 , 9781538612200 , 9781538612217 and 9781538612224
Types: Conference paper
DOI: 10.1109/IWMTS.2018.8454697
ORCIDs: Johansen, Tom Keinicke

DTU users get better search results including licensed content and discounts on order fees.

Log in as DTU user

Access

Analysis