Conference paper
Doping technologies for InP membranes on silicon for nanolasers
We present a systematic study of Zn thermal diffusion and Si ion implantation with subsequent rapid thermal annealing as the methods to fabricate lateral p-i-n junctions in InP membranes on silicon for use in electrically pumped in-plane nanolasers. We describe in detail optimized fabrication steps, which include MOVPE growth of InGaAs/InP epilayers, 2" InP to 4" SiO 2 /Si direct bonding, and several cycles of DUV lithography.
Values for sheet resistance of p-InGaAs/InP and n-InP membranes are obtained, which correspond to carrier concentration levels higher than 10 18 cm -3 for both Zndiffused p-InP and Si-implanted n-InP.
Language: | English |
---|---|
Publisher: | SPIE - International Society for Optical Engineering |
Year: | 2019 |
Pages: | 109390U-109390U-9 |
Proceedings: | Novel In-Plane Semiconductor Lasers XVIII 2019 |
Series: | Proceedings of Spie - the International Society for Optical Engineering |
ISBN: | 1510625208 , 1510625216 , 9781510625204 and 9781510625211 |
ISSN: | 1996756x and 0277786x |
Types: | Conference paper |
DOI: | 10.1117/12.2509487 |
ORCIDs: | Marchevsky, Andrey , Mørk, Jesper and Yvind, Kresten |