Conference paper
Room-temperature dephasing in InAs/GaAs quantum dots
Summary form only given. Semiconductor quantum dots (QDs) are receiving increasing attention for fundamental studies on zero-dimensional confinement and for device applications. Quantum-dot lasers are expected to show superior performances, like high material gain, low and temperature-independent threshold current and chirp-free operation, due to the delta-like density of states (DOS).
We have measured the dephasing time at room temperature of InAs QDs embedded in a waveguide to estimate the lower limit for the energy-broadening of the DOS given by the homogeneous linewidth. The sample consists of 3 stacked layers of InAs-InGaAs-GaAs quantum dots.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 1999 |
| Pages: | 46 |
| Proceedings: | 1999 Quantum Electronics and Laser Science Conference |
| ISBN: | 155752576x and 9781557525765 |
| Types: | Conference paper |
| DOI: | 10.1109/QELS.1999.807152 |
| ORCIDs: | Hvam, Jørn Märcher |
Chirp Energy measurement III-V semiconductors InAs QDs InAs-GaAs InAs-InGaAs-GaAs InAs-InGaAs-GaAs quantum dots InAs/GaAs quantum dots Optical materials Performance gain Quantum dot lasers Quantum dots Semiconductor materials Temperature Threshold current Time measurement chirp-free operation delta-like density of states device applications electronic density of states energy-broadening high material gain homogeneous linewidth indium compounds optical waveguides quantum-dot lasers room-temperature dephasing semiconductor device testing semiconductor quantum dots spectral line breadth stacked layers temperature-independent threshold current zero-dimensional confinement
