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Conference paper

Application Specific Integrated Gate-Drive Circuit for Driving Self-Oscillating Gallium Nitride & Logic-Level Power Transistors

In Proceedings of 2018 Ieee Nordic Circuits and Systems Conference — 2018, pp. 1-6
From

Technical University of Denmark1

Department of Electrical Engineering, Technical University of Denmark2

Electronics, Department of Electrical Engineering, Technical University of Denmark3

Wide bandgap power semiconductors are key enablers for increasing the power density of switch-mode power supplies. However, they require new gate drive technologies. This paper examines and characterizes a fabricated gate-driver in a class-E resonant inverter. The gate-driver’s total area of 1.2mm2 includes two high-voltage transistors for gate-driving, integrated complementary metal-oxide-semiconductor (CMOS) gate-drivers, high-speed floating level-shifter and reset circuitry.

A prototype printed circuit board (PCB) was designed to assess the implications of an electrostatic discharge (ESD) diode, its parasitic capacitance and package bondwire connections. The parasitic capacitance was estimated using its discharge time from an initial voltage and the capacitance is 56.7 pF.

Both bondwires and the diode’s parasitic capacitance is neglegible. The gate-driver’s functional behaviour is validated using a parallel LC resonant tank resembling a self-oscillating gate-drive. Measurements and simulations show the ESD diode clamps the output voltage to a minimum of –2V.

Language: English
Publisher: IEEE
Year: 2018
Pages: 1-6
Proceedings: 2018 IEEE Nordic Circuits and Systems Conference
ISBN: 1538676567 , 1538676575 , 9781538676561 and 9781538676578
Types: Conference paper
DOI: 10.1109/NORCHIP.2018.8573497
ORCIDs: Hertel, Jens Christian , Pejtersen, Jens and Knott, Arnold

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