Conference paper
MEMS-based thick film PZT vibrational energy harvester
We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanical front side protection of an SOI wafer with screen printed PZT thick film.
The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2011 |
| Pages: | 125-128 |
| Proceedings: | 24th International Conference on Micro Electro Mechanical Systems |
| ISBN: | 1424496322 , 9781424496327 , 1424496349 and 9781424496341 |
| ISSN: | 10846999 |
| Types: | Conference paper |
| DOI: | 10.1109/MEMSYS.2011.5734377 |
| ORCIDs: | Lei, Anders , Stoot, Adam Carsten , Thomsen, Erik Vilain and Birkelund, Karen |
Energy harvesting Etching Lead compounds Microfabrication Micromechanical devices Silicon Silicon-on-insulator Thick film devices
Acceleration Fabrication KOH etch MEMS PZT-Si Resonant frequency SOI wafer Thick films Vibrations energy harvesting etching frequency 235 Hz integrated proof mass lead compounds mechanical front side protection microfabrication micromechanical devices optimal resistive load power 14 muW resistance 100 kohm resonant frequency silicon silicon-on-insulator thick film devices unimorph silicon-PZT thick film vibrational energy harvester
