Conference paper
Individual optimization of InAlGaAsP-InP sections for 1.55-μm passively mode-locked lasers
We present integrated single QW semiconductor optical amplifier and MQW electroabsorber modulator based on InAlGaAsP-InP materials for application in a monolithic mode-locked laser. Optimized structures with high-quality butt-joint interfaces are demonstrated.
Language: | English |
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Publisher: | IEEE |
Year: | 2012 |
Pages: | 133-134 |
Proceedings: | 23rd IEEE International Semiconductor Laser Conference (ISLC 2012) |
Series: | I E E E International Semiconductor Laser Conference. Conference Digest |
ISBN: | 1457708272 , 1457708280 , 1457708299 , 9781457708275 , 9781457708282 and 9781457708299 |
ISSN: | 19476981 and 08999406 |
Types: | Conference paper |
DOI: | 10.1109/ISLC.2012.6348364 |
ORCIDs: | Semenova, Elizaveta and Yvind, Kresten |
III-V semiconductors InAlGaAsP-InP Indium phosphide Laser mode locking MQW electroabsorber modulator Masers Quantum well devices Semiconductor optical amplifiers aluminium compounds gallium arsenide high-quality butt-joint interfaces indium compounds laser mode locking monolithic passively-mode-locked lasers optical design method optical design techniques optical fabrication optical modulation quantum well lasers quantum well semiconductor optical amplifier selective area growth semiconductor lasers semiconductor optical amplifiers semiconductor quantum wells wavelength 1.55 mum