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Conference paper

Highly Nonlinear Gallium Nitride Waveguides

In Proceedings of 2018 Conference on Lasers and Electro-optics (cleo) — 2018, pp. 1-2

By Stassen, Erik1,2,3; Pu, Minhao1,2,3; Semenova, Elizaveta1,2,3; Zavarin, E.4; Lundin, W.4; Yvind, Kresten1,2,3

From

Department of Photonics Engineering, Technical University of Denmark1

Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2

Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark3

RAS - Ioffe Physico Technical Institute4

We demonstrate a high effective nonlinearity in high refractive-index-contrast gallium nitride waveguides by performing four-wave mixing characterization. The intrinsic material nonlinearity (n2) of gallium nitride is extracted at telecom wavelengths.

Language: English
Publisher: Optical Society of America
Year: 2018
Pages: 1-2
Proceedings: 2018 Conference on Lasers and Electro-Optics (CLEO)
ISBN: 1538657333 , 1943580421 , 9781538657331 and 9781943580422
Types: Conference paper
DOI: 10.1364/CLEO_SI.2018.STh3I.1
ORCIDs: Stassen, Erik , Pu, Minhao , Semenova, Elizaveta and Yvind, Kresten
Keywords

GaN III-V semiconductors four-wave mixing characterization gallium compounds high effective nonlinearity high refractive-index-contrast gallium nitride waveguides highly nonlinear gallium nitride waveguides integrated optics intrinsic material nonlinearity multiwave mixing optical waveguides refractive index telecom wavelengths wide band gap semiconductors

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