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Conference paper

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

In Proceedings of Cleo: Science and Innovations 2016 — 2016

By Lu, Weifang1,2; Iwasa, Yoshimi3; Ou, Yiyu1,2; Kamiyama, Satoshi3; Petersen, Paul Michael1,2; Ou, Haiyan1,2

From

Department of Photonics Engineering, Technical University of Denmark1

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark2

Meijo University3

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.

Language: English
Publisher: Optical Society of America (OSA)
Year: 2016
Proceedings: 2016 Conference on Lasers and Electro-Optics
ISBN: 1509024344 , 1943580111 , 9781509024346 and 9781943580118
Types: Conference paper
DOI: 10.1364/CLEO_SI.2016.SM1R.5
ORCIDs: Lu, Weifang , Ou, Yiyu , Petersen, Paul Michael and Ou, Haiyan

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