Conference paper
Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films
Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.
Language: | English |
---|---|
Publisher: | Optical Society of America (OSA) |
Year: | 2016 |
Proceedings: | 2016 Conference on Lasers and Electro-Optics |
ISBN: | 1509024344 , 1943580111 , 9781509024346 and 9781943580118 |
Types: | Conference paper |
DOI: | 10.1364/CLEO_SI.2016.SM1R.5 |
ORCIDs: | Lu, Weifang , Ou, Yiyu , Petersen, Paul Michael and Ou, Haiyan |