Conference paper
A linear electrooptic effect in silicon, induced by use of strain
In
2006 3rd Ieee/leos International Conference on Group Iv Photonics - Proceedings Cd-rom
—
2006, pp. 37-39
Abstract
The crystal structure in a silicon waveguide can be distorted by application of strain. Thereby, the otherwise forbidden linear electrooptic (Pockels) effect is induced, opening a new route for optical modulation in silicon.
| Language: | English |
|---|---|
| Publisher: | IEEE/LEOS |
| Year: | 2006 |
| Pages: | 37-39 |
| Proceedings: | 2006 3rd IEEE International Conference on Group IV Photonics |
| ISBN: | 1424400961 , 1509091793 , 9781424400966 and 9781509091799 |
| Types: | Conference paper |
| DOI: | 10.1109/GROUP4.2006.1708157 |
| ORCIDs: | Frandsen, Lars Hagedorn and Lavrinenko, Andrei |
Keywords
Capacitive sensors Electrodes Electrooptic effects Electrooptic modulators Etching Glass Optical modulation Optical waveguides Photonics Pockels effect Si Silicon crystal structure electro-optical modulation electrooptic Pockels effect elemental semiconductors forbidden linear optical modulation silicon silicon waveguide
