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Conference paper

Two-wave mixing in a broad-area semiconductor amplifier

In Technical Digest 2007, pp. 1-2
From

Laser Systems and Optical Materials, Optics and Plasma Research Department, Risø National Laboratory for Sustainable Energy, Technical University of Denmark1

Optics and Plasma Research Department, Risø National Laboratory for Sustainable Energy, Technical University of Denmark2

Risø National Laboratory for Sustainable Energy, Technical University of Denmark3

The two-wave mixing in the broad-area semiconductor amplifier was investigated, both theoretically and experimentally. The experimental results obtained in an 810 nm, 200 μm wide GaAlAs amplifier show good agreement with the theory.

Language: English
Publisher: Optical Society of America
Year: 2007
Pages: 1-2
Proceedings: CLEO/QELS and PhAST 07
ISBN: 1557528349 and 9781557528346
ISSN: 21609004 and 21608989
Types: Conference paper
DOI: 10.1109/CLEO.2007.4453637
ORCIDs: Chi, Mingjun and Petersen, Paul Michael

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