Conference paper
Mobility and bulk electron-phonon interaction in two-dimensional materials
We present calculations of the phonon-limited mobility in intrinsic n-type monolayer graphene, silicene and MoS2. The material properties, including the electron-phonon interaction, are calculated from first principles. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes.
However, we find that graphene only has a slightly higher mobility compared to silicene. For MoS2 we obtain several orders of magnitude lower mobilities and in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented Boltzmann Transport Equation (BTE) solver in the Atomistix ToolKit (ATK) simulation tool.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2015 |
| Pages: | 32-35 |
| Proceedings: | International Conference on Simulation of Semiconductor Processes and Devices 2015 |
| Series: | International Conference on Simulation of Semiconductor Processes and Devices. Proceedings |
| ISBN: | 1467378585 , 1467378593 , 1467378607 , 1467378615 , 9781467378581 , 9781467378598 , 9781467378604 and 9781467378611 |
| ISSN: | 19461577 and 19461569 |
| Types: | Conference paper |
| DOI: | 10.1109/SISPAD.2015.7292251 |
| ORCIDs: | Gunst, Tue and Brandbyge, Mads |
Acoustics BTE Boltzmann equation Boltzmann transport equation C Charge carrier density Charge carrier processes Couplings Graphene MoS<sub>2</sub> Phonons Scattering Si ab initio calculations atomistix toolkit simulation tool bulk electron-phonon interaction electron mobility electron-phonon interactions elemental semiconductors first principles calculation intrinsic n-type monolayer graphene low mobility molybdenum compounds monolayers orders of magnitude out-of-plane modes phonon-limited mobility silicene silicon two-dimensional materials
