Conference paper
Multi-physic Analysis for GaN Transistor PCB Layout
PCB layout for Gallium Nitride (GaN) transistor power loops are critical for achieving a stable operation in power converters. Optimal design should minimize the parasitic inductance as well as provide a low thermal resistance for heat dissipation. A multi-physic evaluation of performance between different PCB designs are made and a novel layout is proposed in this paper.
The parasitic inductance and heat distribution of each layout are compared. The parasitic inductance is obtained from the oscillation frequency of the transistor drain-source voltage ringing. The thermal comparison is done with a combination of measurements and calculations. To ensure identical operating conditions, the buck converter adopts a modular design idea, where the plug-in totem poles of different designs are placed on the same motherboard.
An optimized strategy for GaN transistor layout is given.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2019 |
| Pages: | 3407-3413 |
| Proceedings: | 2019 IEEE Applied Power Electronics Conference and Exposition |
| ISBN: | 1538683296 , 153868330X , 153868330x , 1538683318 , 9781538683293 , 9781538683309 and 9781538683316 |
| ISSN: | 10482334 and 24706647 |
| Types: | Conference paper |
| DOI: | 10.1109/APEC.2019.8722166 |
| ORCIDs: | Sun, Bainan , Jørgensen, Kasper Lüthje , Zhang, Zhe and Andersen, Michael A. E. |
Buck converters Capacitors GaN Gallium nitride III-V semiconductors Inductance Layout PCB designs Switches Transistors buck converter gallium compounds gallium nitride transistor PCB layout gallium nitride transistor power loops heat dissipation heat distribution low thermal resistance modular design idea multi-physic simulation multiphysic analysis multiphysic evaluation optimal design oscillation frequency parasitic inductance plug-in totem poles power converters power convertors printed circuit layout thermal analysis thermal comparison thermal resistance transistor circuits transistor drain-source voltage ringing wide band gap semiconductors
