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Book chapter

Tunable High-Power External-Cavity GaN Diode Laser Systems in the Visible Spectral Range

In Laser Technology and Its Applications — 2018

Edited by Ma, Yufei

From

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark1

Department of Photonics Engineering, Technical University of Denmark2

In this chapter, both blue and green high-power tunable diode laser systems based on GaN broad-area diode laser (BAL) in Littrow external cavity are demonstrated. For blue diode laser system, for high-power application, an output power around 530 mW over a 1.4 nm tunable range is obtained; for wide tunable range application, an output power around 80 mW over a 6.0 nm tunable range is obtained.

For the green diode laser system, for high-power application, an output power around 480 mW with a tunable range of 2.1 nm is achieved; for wide tunable range application, an output power of 50 mW with a tunable range of 9.2 nm is achieved. The tuning range and output power optimization of an external-cavity diode laser system is investigated based on the experimental results obtained in the blue and green external-cavity GaN diode laser systems.

The obtained results can be used as a guide for selecting gratings for external-cavity diode lasers for different requirements. The temporal dynamics of the green diode laser system is studied experimentally, and pulse package oscillation is observed, for the first time to our knowledge, in a BAL with an external-cavity grating feedback.

Language: English
Publisher: InTechOpen
Year: 2018
Types: Book chapter
DOI: 10.5772/intechopen.79703
ORCIDs: Chi, Mingjun , Jensen, Ole Bjarlin , Hansen, Anders Kragh and Petersen, Paul Michael

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