Conference paper
Optimization of Nonlinear Figure-of-Merits of Integrated Power MOSFETs in Partial SOI Process
In
Proceedings of Xxv International Scientific Conference Electronics
—
2016, pp. 1-4
Abstract
State-of-the-art power semiconductor industry uses figure-of-merits (FOMs) for technology-to-technology and/or device-to-device comparisons. However, the existing FOMs are fundamentally nonlinear due to the nonlinearities of the parameters such as the gate charge and the output charge versus different operating conditions.
A systematic analysis of the optimization of these FOMs has not been previously established. The optimization methods are verified on a 100 V power MOSFET implemented in a 0.18 µm partial SOI process. Its FOMs are lowered by 1.3-18.3 times and improved by 22-95 % with optimized conditions of quasi-zero voltage switching
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2016 |
| Pages: | 1-4 |
| Proceedings: | XXV International Scientific Conference Electronics |
| ISBN: | 1509028838 , 1509028846 , 9781509028832 , 9781509028849 , 1509028811 and 9781509028818 |
| Types: | Conference paper |
| DOI: | 10.1109/ET.2016.7753476 |
| ORCIDs: | Fan, Lin , Jørgensen, Ivan Harald Holger and Knott, Arnold |
