Conference paper
Research of Gap Filler Material in the GaN Transistor Thermal Management
High power dissipation in the small package Gallium Nitride (GaN) transistor calls for challenge in thermal design. This paper compares the impact of different gap filler materials in the GaN transistor power dissipation. Simulation and experimental results are given to reveal the maximum power dissipated in each setup, which validates the critical impact of gap filler material in thermal design.
The developed test procedure and thermal model are elaborated, which can be easily applied to the estimation of thermal management in other GaN transistor applications
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2019 |
| Pages: | 1-6 |
| Proceedings: | 10th International Conference on Power Electronics – ECCE Asia |
| ISBN: | 1728116120 , 8957083138 , 9781728116129 and 9788957083130 |
| ISSN: | 21506086 and 21506078 |
| Types: | Conference paper |
| DOI: | 10.23919/ICPE2019-ECCEAsia42246.2019.8796905 |
| ORCIDs: | Sun, Bainan , Iversen, Niels Elkjær , Zhang, Zhe and Andersen, Michael A. E. |
Conductivity GaN Gallium nitride III-V semiconductors Temperature measurement Thermal conductivity Thermal resistance Transistors gallium compounds gallium nitride transistor gap filler gap filler material power transistors semiconductor device models semiconductor device packaging semiconductor device testing thermal design thermal dissipation thermal management (packaging) thermal model transistor power dissipation transistor thermal management wide band gap semiconductors
