Conference paper
Low temperature bonding of heterogeneous materials using Al2O3 as an intermediate layer
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark1
Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark2
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark3
Department of Photonics Engineering, Technical University of Denmark4
Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark5
Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark6
Surface Physics and Catalysis, Department of Physics, Technical University of Denmark7
Department of Micro- and Nanotechnology, Technical University of Denmark8
Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark9
Direct wafer bonding is a key enabling technology for many current and emerging photonic devices. Most prior work on direct wafer bonding has, however, focused on the Si platform for fabrication of silicon-on-insulator (SOI) and micro-electromechanical systems (MEMS). As a result, a universal bonding solution for heterogeneous material systems has not yet been developed.
This has been a roadblock in the realization of novel devices which need the integration of new semiconductor platforms such as III-V on Si, Ge on Sapphire, LiNbO3 on GaAs etc. The large thermal expansion coefficient mismatch in the hetero-material systems limits the annealing to low temperatures to avoid stressed films.
This work explores the use of Al2O3 as an intermediate layer for bonding heterogeneous materials. The key to achieve a stronger bond is to maximize the hydroxyl group density of the bonding interfaces. The use of Al2O3 helps achieve that, since it has a high hydroxyl group density (around 18 OH/nm2 at RT) which is approximately 4 times that of a Si surface.
This work optimizes the bonding process using Al2O3 by studying the contribution of Al2O3 deposition parameters. An optimized process is presented and applied to bond GaAs on Sapphire and InP on SiO2/Si.
Language: | English |
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Publisher: | SPIE - International Society for Optical Engineering |
Year: | 2018 |
Pages: | 105350V-105350V-7 |
Proceedings: | Integrated Optics |
Series: | Proceedings of Spie - the International Society for Optical Engineering |
ISBN: | 1510615555 , 1510615563 , 9781510615557 and 9781510615564 |
ISSN: | 1996756x and 0277786x |
Types: | Conference paper |
DOI: | 10.1117/12.2289526 |
ORCIDs: | Sahoo, Hitesh Kumar , Ottaviano, Luisa , Hansen, Ole and Yvind, Kresten |