Conference paper
Development of design of 808 nm Al-free laser heterostructures with asymmetric barrier layers
We study the possibility of realization of the asymmetric barrier layers (ABL) concept in an 808-nm Al-free GaInAsP/InGaP/GaAs semiconductor laser. Two ABLs on both sides of the active region are aimed to suppress the parasitic recombination in the optical confinement layers. It is shown that such ABL-laser can be made fully Al-free having high suppression ratios for parasitic charge carrier flows (60 and 207 times for electrons and holes, respectively, as compared to a conventional SCH heterostructure).
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2018 |
| Pages: | 607-607 |
| Proceedings: | 18th International Conference on Laser Optics |
| ISBN: | 1538636115 , 1538636123 , 1538636131 , 9781538636114 , 9781538636121 and 9781538636138 |
| Types: | Conference paper |
| DOI: | 10.1109/LO.2018.8435539 |
| ORCIDs: | Semenova, E.S. |
Al-free heterostructure Asymmetric barrier layers Parasitic recombination Quantum well Semiconductor lasers
ABL-laser Al-free laser heterostructures Al-free semiconductor laser Charge carrier processes Diode lasers GaInAsP-InGaP-GaAs III-V semiconductors Metals Optical waveguides Radiative recombination active region asymmetric barrier layers electron-hole recombination gallium arsenide gallium compounds indium compounds optical confinement layers parasitic charge carrier flows parasitic recombination quantum well semiconductor laser semiconductor lasers suppression ratios wavelength 808.0 nm
