Conference paper
Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization
In
2016 Conference on Lasers and Electro-optics
—
2016, pp. 1-2
Abstract
We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
| Language: | English |
|---|---|
| Publisher: | Optical Society of America (OSA) |
| Year: | 2016 |
| Pages: | 1-2 |
| Proceedings: | 2016 Conference on Lasers and Electro-Optics |
| ISBN: | 1509024344 , 1943580111 , 9781509024346 and 9781943580118 |
| Types: | Conference paper |
| DOI: | 10.1364/CLEO_SI.2016.STu3R.6 |
| ORCIDs: | Fadil, Ahmed , Ou, Yiyu and Ou, Haiyan |
