Conference paper
Coherent light from E-field induced quantum coupling of exciton states in superlattice-like quantum wells
Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 Å.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 1999 |
| Pages: | 12-13 |
| Proceedings: | 1999 Quantum Electronics and Laser Science Conference |
| ISBN: | 155752576x and 9781557525765 |
| Types: | Conference paper |
| DOI: | 10.1109/QELS.1999.807096 |
| ORCIDs: | Hvam, Jørn Märcher |
17 A 62 to 102 A AlGaAs AlGaAs barriers Density measurement E-field induced quantum coupling Electric variables measurement Electrons Excitons GaAs Gallium arsenide III-V semiconductors MBE-grown GaAs sample Optical coupling Optical superlattices Quantum dot lasers Quantum dots Stress coherent light coherent light emission coupled quantum wells electro-optical effects exciton states external E-fields gallium arsenide molecular beam epitaxial growth monolayer monolayers multiwave mixing semiconductor growth semiconductor quantum wells single quantum wells superlattice-like miniband superlattice-like quantum wells
