Conference paper
Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization
We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Language: | English |
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Publisher: | Optical Society of America (OSA) |
Year: | 2016 |
Pages: | 1-2 |
Proceedings: | 2016 Conference on Lasers and Electro-Optics |
ISBN: | 1509024344 , 1943580111 , 9781509024346 and 9781943580118 |
Types: | Conference paper |
DOI: | 10.1364/CLEO_SI.2016.STu3R.6 |
ORCIDs: | Fadil, Ahmed , Ou, Yiyu and Ou, Haiyan |