Conference paper
Modeling of Schottky Barrier Diode Millimeter-Wave Multipliers at Cryogenic Temperatures
Department of Electrical Engineering, Technical University of Denmark1
Electromagnetic Systems, Department of Electrical Engineering, Technical University of Denmark2
Virginia Diodes, Inc.3
Center for Hyperpolarization in Magnetic Resonance, Centers, Technical University of Denmark4
Center for Magnetic Resonance, Department of Electrical Engineering, Technical University of Denmark5
We report on the evaluation of Schottky barrier diode GaAs multipliers at cryogenic temperatures. A GaAs Schottky barrier diode model is developed for theoretical estimation of doubler performance. The model is used to predict efficiency of doublers from room to cryogenic temperatures. The theoretical estimation is verified experimentally using a 78 GHz doubler cooled down to 14 K.
The observed efficiency improvement due to cooling is approximately 4 % per 100 degrees.
| Language: | English |
|---|---|
| Publisher: | IEEE |
| Year: | 2015 |
| Pages: | 1-4 |
| Proceedings: | 2015 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference |
| ISBN: | 1467394920 , 1467394939 , 1509004319 , 9781467394925 , 9781467394932 and 9781509004317 |
| Types: | Conference paper |
| DOI: | 10.1109/IMOC.2015.7369088 |
| ORCIDs: | Johansen, Tom K. , Rybalko, Oleksandr , Zhurbenko, Vitaliy , Bowen, Sean and Ardenkjær-Larsen, Jan Henrik |
Cryogenics III-V semiconductors Schottky barrier diode millimeter-wave multipliers Schottky barrier diode model Schottky barriers Schottky diodes Solid modeling Temperature cooling cryogenic temperature cryogenic temperatures cryogenics frequency 78 GHz frequency multiplier frequency multipliers gallium arsenide millimeter wave millimetre wave frequency convertors multiplying circuits varactor
