Conference paper
High Q AlGaAs-On-Sapphire Microresonators
Department of Photonics Engineering, Technical University of Denmark1
Nanophotonic Devices, Department of Photonics Engineering, Technical University of Denmark2
Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark3
Centre of Excellence for Silicon Photonics for Optical Communications, Centers, Technical University of Denmark4
Quantum and Laser Photonics, Department of Photonics Engineering, Technical University of Denmark5
Ultra-fast Optical Communication, Department of Photonics Engineering, Technical University of Denmark6
We demonstrate an AlGaAs-on-sapphire (AlGaAsOS) microresonator with intrinsic quality factor (Q) as high as 460, 000. We investigate the thermal property of this platform. The realization of the AlGaAsOS platform also opens new prospects for AlGaAs devices in nonlinear applications in the mid-infrared wavelength range.
Language: | English |
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Publisher: | Optical Society of America |
Year: | 2018 |
Pages: | 1-2 |
Proceedings: | 2018 Conference on Lasers and Electro-Optics (CLEO) |
ISBN: | 1538657333 , 1943580421 , 9781538657331 and 9781943580422 |
Types: | Conference paper |
DOI: | 10.1364/CLEO_SI.2018.SW4A.4 |
ORCIDs: | Pu, Minhao , Sahoo, Hitesh Kumar , Semenova, Elizaveta and Yvind, Kresten |
Microcavities Nonlinear optics Optical waveguides Optical wavelength conversion Resonators Substrates Thermal stability
AlGaAs devices AlGaAs-Al<sub>2</sub>O<sub>3</sub> AlGaAsOS platform III-V semiconductors Q-factor aluminium compounds gallium arsenide high Q AlGaAs-on-sapphire microresonators integrated optics intrinsic quality factor micro-optomechanical devices microcavities micromechanical resonators mid-infrared wavelength range nonlinear applications optical resonators sapphire semiconductor-insulator boundaries thermal property