Conference paper
Phonon-electron coupling in luminescent defects in hexagonal boron nitride
Department of Photonics Engineering, Technical University of Denmark1
Structured Electromagnetic Materials, Department of Photonics Engineering, Technical University of Denmark2
Center for Nanostructured Graphene, Centers, Technical University of Denmark3
Nanocarbon, Department of Micro- and Nanotechnology, Technical University of Denmark4
Department of Micro- and Nanotechnology, Technical University of Denmark5
University of Manchester6
Theoretical Nanotechnology, Department of Micro- and Nanotechnology, Technical University of Denmark7
In the wide range of two-dimensional materials such as graphene and transition metal dichalcogenides, hexagonal boron nitride (hBN) provides a large band gap of around 6 eV. [1] This enables hBN to host defects with energy states deep inside in the electronic band gap, which are active at room temperature.
Using state-of-the-art optical photoluminescence, we identified defects in multilayer hBN with multiple phonon side bands. We observed a zero phonon line at a photon energy of 2.14 eV and two pronounced phonon side bands at photon energies of 1.98 eV and 1.81 eV. [2] A model treating the electronic states in the defects as a two-level system coupled to longitudinal optical phonons, shows very good agreement with our experimental data.
Further explorations of defects in hBN will pave the way to a better understanding of the coupling mechanism between phonons and defects in low-dimensional materials. These studies have been carried out within the Center of Nanostructured Graphene (CNG).
Language: | English |
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Year: | 2018 |
Proceedings: | Hybrid Approaches to Quantum-Information Processing |
Types: | Conference paper |
ORCIDs: | Fischer, Moritz , Geisler, Mathias , Kaasbjerg, Kristen , Bøggild, Peter , Xiao, Sanshui , Wubs, Martijn and Stenger, Nicolas |