Conference paper
Electrically driven surface plasmon light-emitting diodes
We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.
Language: | English |
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Year: | 2016 |
Proceedings: | 4th International Workshop on LEDs and Solar Applications |
Types: | Conference paper |
ORCIDs: | Fadil, Ahmed , Ou, Yiyu and Ou, Haiyan |