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Conference paper

Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

From

Department of Photonics Engineering, Technical University of Denmark1

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark2

Nanopillars have been fabricated on InGaN/GaN ligh t-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.

Language: English
Year: 2014
Proceedings: Solid-State and Organic Lighting
Types: Conference paper
ORCIDs: Fadil, Ahmed , Ou, Yiyu and Ou, Haiyan

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