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Conference paper

Detection of effective recombination centers in fluorescent SiC using thermally stimulated luminescence

By Wei, Yi1,2; Künecke, Ulrike3; Wellmann, Peter3; Ou, Haiyan1,2

From

Department of Photonics Engineering, Technical University of Denmark1

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark2

Friedrich-Alexander University Erlangen-Nürnberg3

Two n-type 6H fluorescent SiC (f-SiC) samples have been characterized using thermally stimulated luminescence (TSL) spectroscopy, where the dominant carriers recombination regime has been found via the numerical simulations.

Language: English
Year: 2017
Proceedings: 5th international workshop on LED and Solar Applications
Types: Conference paper
ORCIDs: Wei, Yi and Ou, Haiyan
Keywords

6H SiC TSL re-trapping

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