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Conference paper

Effect of dopants on the morphology of porous SiC

By Lu, Weifang1,2; Iwasa, Yoshimi3; Ou, Yiyu1,2; Kamiyama, Satoshi3; Petersen, Paul Michael1,2; Ou, Haiyan1,2

From

Department of Photonics Engineering, Technical University of Denmark1

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark2

Meijo University3

Porous SiC samples with different doping level were fabricated and investigated by using anodic oxidation method. The morphology of the porous structures was explained by space charge layer width, which was affected by the free carrier-dopants concentration.

Language: English
Year: 2017
Proceedings: 5th international workshop on LED and Solar Applications
Types: Conference paper
ORCIDs: Lu, Weifang , Ou, Yiyu , Petersen, Paul Michael and Ou, Haiyan
Keywords

Dopants Morphology Porous Space charge layer

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