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Interpreted as:

title:(Epitaxial AND growth AND of AND atomically AND flat AND gadolinia-doped AND ceria AND thin AND films AND by AND pulsed AND laser AND deposition)

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1 Conference paper

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

), to the growth of dense, gas impermeable 10 mol% gadolinia-doped ceria (CGO10) solid electrolyte can be overcome by the seeding process. In order to evaluate the seed layer preparation, the effects of different thermal annealing treatments on the morphology, microstructure and surface roughness of ultrathin CGO

Year: 2010

Language: English

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2 Journal article

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky–Krastanov growth mode. However, this three-dimensional island

Year: 2011

Language: English

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