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Conference paper

Lateral boron distribution in polycrystalline SiC source for growth of fluorescent 6H-SiC

From

KTH Royal Institute of Technology1

Friedrich-Alexander University Erlangen-Nürnberg2

Linköping University3

Department of Photonics Engineering, Technical University of Denmark4

Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark5

Language: English
Year: 2012
Proceedings: European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Types: Conference paper
ORCIDs: Ou, Yiyu and Ou, Haiyan

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