Conference paper · Journal article
Photoluminescence topography of fluorescent SiC and its corresponding source crystals
In
Materials Science Forum
—
2012, Volume 740-742, pp. 421-424
Abstract
The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material.
It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.
| Language: | English |
|---|---|
| Publisher: | Trans Tech Publications Ltd |
| Year: | 2012 |
| Pages: | 421-424 |
| Proceedings: | European Conference on Silicon Carbide and Related Materials (ECSCRM 2012) |
| Series: | Materials Science Forum |
| ISBN: | 3037856246 , 3038260053 , 9783037856246 and 9783038260059 |
| ISSN: | 16629752 and 02555476 |
| Types: | Conference paper and Journal article |
| DOI: | 10.4028/www.scientific.net/MSF.740-742.421 |
| ORCIDs: | Ou, Yiyu and Ou, Haiyan |
